Concurrent dual-band signal amplifier

ABSTRACT

A signal amplifier includes a band suppression filter configured to suppress a preset band among bands included in an input signal, a first common source-type amplifier connected between a supply terminal of a driving voltage and a ground terminal and configured to amplify a first input signal separated from an output signal of the band suppression filter in a common input node to provide a first amplified signal to a common output node, a second common source-type amplifier configured to amplify a second input signal separated from the output signal of the band suppression filter in the common input node to provide a second amplified signal to the common output node, and an output matcher configured to match levels of impedance between the common output node and an output terminal and to transfer a combined signal to the output terminal.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims the benefit under 35 USC 119(a) of Korean PatentApplication No. 10-2014-0190836 filed on Dec. 26, 2014, with the KoreanIntellectual Property Office, the entire disclosure of which isincorporated herein by reference for all purposes.

BACKGROUND

1. Field

The following description relates to a concurrent dual-band signalamplifier for use in a multi-band radio frequency (RF) receivingterminal. The concurrent dual-band amplifier has an inverted topologywith a structure of stacked common sources.

2. Description of Related Art

Generally, in accordance with an increase in a demand for anddiversification of standards for wireless communications, demand for amulti-band transmitter/receiver allowing a single portable device tosimultaneously process signals within several bands has increased.

For example, in the case of wireless local area network (WLAN) usage,the 2.4 GHz and 5 GHz bands are being used simultaneously, and in thecase of long term evolution (LTE) in Korea, the 800 MHz, 900 MHz, 1800MHz, and 2.1 GHz bands are being used simultaneously.

Therefore, a device that is able to transmit and receive signals withinmultiple bands is desirable for use in a single radio frequency (RF)front end module. More specifically, a technology for processing signalsat several frequencies or within a wide band of frequencies using asingle low noise amplifier (LNA) positioned at an initial stage of areceiver is desirable.

Meanwhile, a low noise amplifier that supports a concurrent dual-bandprocessor that is able to simultaneously process signals within twodifferent bands and is able to support a wide band of frequencies mayhave a cascode structure or a cascade structure. For example, a cascodestructure is a structure using a two-stage amplifier composed of atransconductance amplifier followed by a current buffer. By contrast, acascade structure is an amplifier that has a two-port networkconstructed from a series of amplifiers, where each amplifier sends itsoutput to the input of the next amplifier in a daisy chain.

Thus, an amplifier having such a cascode structure has a structure inwhich two transistors are stacked between a power terminal and a groundterminal (GND) and has a single current path, such that only a smallamount of current is consumed. However, since an amplifier having acascode structure includes a common gate amplifier whose gaincharacteristics may be poor and a common source amplifier whose gaincharacteristics may be excellent, in such a case corresponding to usingthe common gate amplifier, it is desirable to improve gaincharacteristics.

Also, in further detail, an amplifier that has a cascade structure has astructure in which amplifying units of at least four stages are locatedbetween an input terminal and an output terminal, and the amplifyingunits of respective stages are formed using a common source amplifier,such that gain characteristics of such amplifying units are excellent.However, because a large amount of current may be consumed when such acascade structure is used due to the presence of two or more currentpaths, it is desirable for the amplifier having such a cascade structureto be improved in terms of current consumption.

As described further above, in the case of using the common sourceamplifier for which gain characteristics are excellent, an issue that arelatively large amount of current is consumed presents itself.

Alternative approaches disclose use of a dual-band low noise amplifier,but do not disclose a solution for the previously mentioned issuerelated to simultaneously achieving good gain characteristics whileconsuming a moderate amount of current.

SUMMARY

This Summary is provided to introduce a selection of concepts in asimplified form that are further described below in the DetailedDescription. This Summary is not intended to identify key features oressential features of the claimed subject matter, nor is it intended tobe used as an aid in determining the scope of the claimed subjectmatter.

Examples provide a concurrent dual-band signal amplifier in which anamount of consumed current is decreased, gain characteristics areimproved, and the number of inductors used for input and output matchingare reduced to decrease a size of the amplifier.

In one general aspect, a signal amplifier includes a band suppressionfilter configured to suppress a preset band among bands included in aninput signal, a first common source-type amplifier connected between asupply terminal of a driving voltage and a ground terminal andconfigured to amplify a first input signal separated from an outputsignal of the band suppression filter in a common input node to providea first amplified signal to a common output node, a second commonsource-type amplifier stacked between the supply terminal of the drivingvoltage and the ground terminal together with the first commonsource-type amplifier and configured to amplify a second input signalseparated from the output signal of the band suppression filter in thecommon input node to provide a second amplified signal to the commonoutput node, and an output matcher configured to match levels ofimpedance between the common output node and an output terminal and totransfer a combined signal generated by combining the first amplifiedsignal and the second amplified signal with each other in the commonoutput node to the output terminal, wherein the first and second commonsource-type amplifiers form a single current path between the supplyterminal of the driving voltage and the ground terminal.

The band suppression filter may include a first resonator configured tosuppress the preset band, and a second resonator configured to suppressthe preset band.

The first resonator may include a first inductor and a first capacitorconnected to each other in parallel, and may form a parallel resonancepoint in the preset band.

The second resonator may include a second inductor and a secondcapacitor connected to each other in series, and may further include athird capacitor connected to the second inductor in parallel, and mayform a serial resonance point in the preset band.

The first common source-type amplifier may include a first P-type metaloxide semiconductor (PMOS) transistor having a source connected to thesupply terminal of the driving voltage, a gate connected to an outputterminal of the band suppression filter through a first couplingcapacitor and connected to a supply terminal of a first gate voltage,and a drain connected to the common output node and configured toamplify a signal from the band suppression filter to provide the firstamplified signal.

The second common source-type amplifier may include a first N-type MOS(NMOS) transistor having a drain connected to the common output node, agate connected to an output terminal of the band suppression filterthrough a second coupling capacitor and connected to a supply terminalof a second gate voltage, and a source connected to the ground terminaland configured to amplify a signal from the band suppression filter toprovide the second amplified signal.

The output matcher may include a source follower amplifier configured totransfer the combined signal to the output terminal.

The output matcher may include a second NMOS transistor having a drainconnected to the supply terminal of the driving voltage, a gateconnected to the common output node to receive the combined signal, anda source connected to the ground terminal through a source resistor andconnected to the output terminal through an output capacitor.

In another general aspect, a signal amplifier includes a bandsuppression filter configured to suppress a preset band among bandsincluded in an input signal, a first common source-type amplifierconnected between a supply terminal of a driving voltage and a groundterminal and configured to amplify a first input signal separated froman output signal of the band suppression filter in a common input nodeto provide a first amplified signal to a common output node, a secondcommon source-type amplifier stacked between the supply terminal of thedriving voltage and the ground terminal together with the first commonsource-type amplifier and configured to amplify a second input signalseparated from the output signal of the band suppression filter in thecommon input node to provide a second amplified signal to the commonoutput node, an output matcher configured to match levels of impedancebetween the common output node and an output terminal and configured totransfer a combined signal generated by combining the first amplifiedsignal and the second amplified signal with each other in the commonoutput node to the output terminal, and a feedback circuit connectedbetween the common input node and the common output node, configured tofeedback a signal of the common output node to the common input node,wherein the first and second common source-type amplifiers form a singlecurrent path between the supply terminal of the driving voltage and theground terminal.

The band suppression filter may include a first resonator configured tosuppress the preset band, and a second resonator configured to suppressthe preset band.

The first resonator may include a first inductor and a first capacitorconnected to each other in parallel, and may form a parallel resonancepoint in the preset band.

The second resonator may include a second inductor and a secondcapacitor connected to each other in series, and may further include athird capacitor connected to the second inductor in parallel, and mayform a serial resonance point in the preset band.

The first common source-type amplifier may include a first PMOStransistor having a source connected to the supply terminal of thedriving voltage, a gate connected to an output terminal of the bandsuppression filter through a first coupling capacitor and connected to asupply terminal of a first gate voltage, and a drain connected to thecommon output node and configured to amplify a signal from the bandsuppression filter to provide the first amplified signal.

The second common source-type amplifier may include a first NMOStransistor having a drain connected to the common output node, a gateconnected to an output terminal of the band suppression filter through asecond coupling capacitor and connected to a supply terminal of a secondgate voltage, and a source connected to the ground terminal andconfigured to amplify a signal from the band suppression filter toprovide the second amplified signal.

The output matcher may include a source follower amplifier configured totransfer the combined signal to the output terminal.

The output matcher may include a second NMOS transistor having a drainconnected to the supply terminal of the driving voltage, a gateconnected to the common output node to receive the combined signal, anda source connected to the ground terminal through a source resistor andconnected to the output terminal through an output capacitor.

Hence, in various examples, the first and second common source-typeamplifiers form the single current path between the supply terminal ofthe driving voltage and the ground terminal, such that currentconsumption is decreased.

Other features and aspects will be apparent from the following detaileddescription, the drawings, and the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram illustrating a first implementation of asignal amplifier according to an example.

FIG. 2 is a circuit diagram illustrating a second implementation of asignal amplifier according to an example.

FIG. 3 is a detailed circuit diagram of the signal amplifier of theexample of FIG. 1.

FIG. 4 is a detailed circuit diagram of the signal amplifier of theexample of FIG. 2.

FIG. 5 is a graph illustrating S-parameter characteristics of a bandsuppression filter unit according to an example.

FIG. 6 is a graph illustrating gain and noise factor characteristicsaccording to an example.

FIG. 7 is a graph illustrating input and output return losscharacteristics according to an example.

FIG. 8 is a chart illustrating input impedance matching according to anexample.

FIG. 9 is a chart illustrating output impedance matching according to anexample.

FIG. 10 is a graph illustrating noise impedance characteristicsaccording to an example.

FIG. 11 is a graph illustrating 700 to 900 MHz-input third orderintercept point (IIP3) characteristics according to an example.

FIG. 12 is a graph illustrating 1900 to 2000 MHz-IIP3 characteristicsaccording to an example.

Throughout the drawings and the detailed description, the same referencenumerals refer to the same elements. The drawings may not be to scale,and the relative size, proportions, and depiction of elements in thedrawings may be exaggerated for clarity, illustration, and convenience.

DETAILED DESCRIPTION

The following detailed description is provided to assist the reader ingaining a comprehensive understanding of the methods, apparatuses,and/or systems described herein. However, various changes,modifications, and equivalents of the methods, apparatuses, and/orsystems described herein will be apparent to one of ordinary skill inthe art. The sequences of operations described herein are merelyexamples, and are not limited to those set forth herein, but may bechanged as will be apparent to one of ordinary skill in the art, withthe exception of operations necessarily occurring in a certain order.Also, descriptions of functions and constructions that are well known toone of ordinary skill in the art may be omitted for increased clarityand conciseness.

The features described herein may be embodied in different forms, andare not to be construed as being limited to the examples describedherein. Rather, the examples described herein have been provided so thatthis disclosure will be thorough and complete, and will convey the fullscope of the disclosure to one of ordinary skill in the art.

Hereinafter, examples are described in further detail with reference tothe accompanying drawings.

FIG. 1 is a circuit diagram illustrating a first implementation of asignal amplifier according to an example, and FIG. 2 is a circuitdiagram illustrating a second implementation of a signal amplifieraccording to an example.

Referring to FIGS. 1 and 2, a signal amplifier according to an exampleincludes a band suppression filter unit 100, a first common source-typeamplifying unit 200, a second common source-type amplifying unit 300,and an output matching unit 400.

In these examples, the band suppression filter unit 100 suppresses apreset band among bands included in an input signal Sin. For example, ina scenario in which the signal amplifier is used in a preset concurrentdual-band system, the band suppression filter unit 100 suppresses a bandthat is other than a preset concurrent dual-band.

As an example, the band suppression filter unit 100 includes at least afirst resonance unit 110 and a second resonance unit 120.

For example, the first common source-type amplifying unit 200 isconnected between a supply terminal of a driving voltage Vdd and aground terminal, and amplifies a first input signal separated from anoutput signal of the band suppression filter unit 100 in a common inputnode NCI to provide a first amplified signal S21 to a common output nodeNCO.

In such an example, the second common source-type amplifying unit 300 isstacked together with the first common source-type amplifying unit 200between the driving voltage Vdd and the ground terminal, and amplifies asecond input signal separated from the output signal of the bandsuppression filter unit 100 in the common input node NCI to provide asecond amplified signal S22 to the common output node NCO.

In this example, the first common source-type amplifying unit 200 andthe second common source-type amplifying unit 300 form a single currentpath between the supply terminal of the driving voltage Vdd and theground terminal. Therefore, current consumption is decreased, but alsotwo stacked source type amplifiers are used, such that a high degree ofgain is achieved.

In addition, the output matching unit 400 matches levels of impedancebetween the common output node NCO and an output terminal OUT, andtransfers a combined signal Scom, generated by combining the firstamplified signal S21 and the second amplified signal S22 with each otherin the common output node NCO, into the output terminal OUT.

Referring to FIG. 2, the signal amplifier further includes a feedbackcircuit unit 500.

In the example of FIG. 2, the feedback circuit unit 500 is connectedbetween the common input node NCI and the common output node NCO so asto feedback a signal of the common output node NCO into the common inputnode NCI. In a scenario in which the feedback circuit unit 500 asdescribed above is further included in the signal amplifier, a bandwidthof the signal amplifier is increased while a gain of the signalamplifier is also decreased.

FIG. 3 is a detailed circuit diagram of the signal amplifier of theexample of FIG. 1; and FIG. 4 is a detailed circuit diagram of thesignal amplifier of the example of FIG. 2.

Referring to the examples of FIGS. 3 and 4, the first resonance unit 110includes a first inductor L11 and a first capacitor C11 that areconnected to each other in parallel. Here, the first resonance unit 110including the first inductor L11 and the first capacitor C11 serve as aparallel resonance circuit to form a parallel resonance point in thepreset band.

As an example, when the concurrent dual-bands are 800 MHz and 1.9 GHz,the parallel resonance point is formed in a band of approximately 1.4GHz. In this example, the approximately 1.4 GHz band in which theparallel resonance point is formed is suppressed, and simultaneouslybands of 800 MHz and 1.9 GHz, which are the concurrent dual-bands, arepass bands.

Also in this example, the second resonance unit 120 includes a secondinductor L21 and a second capacitor C21 connected to each other inseries, and further includes a third capacitor C22 connected to thesecond inductor L21 in parallel.

In this example, the second resonance unit 120 including an LC circuitof the second inductor L21 and the third capacitor C22 and the secondcapacitor C21 serve as a resonance circuit, constituting a serialcircuit between the LC circuit L21 and C22 and the second capacitor C21,to form a resonance point in the preset band.

For example, when the concurrent dual-bands are 800 MHz and 1.9 GHz, theserial resonance point is formed in a band of approximately 1.4 GHz. Inthis example, the band of approximately 1.4 GHz in which the serialresonance point is formed is bypassed to a ground, and 800 MHz and 1.9GHz bands, which are the concurrent dual-bands, are pass bands.

Furthermore, in order to form a resonance point in the 1.4 GHz bandusing a serial resonance circuit of the second inductor L21 and thesecond capacitor C21, the second inductor L21 is formed at an inductancepattern length to have a value of approximately 12 nH in inductance.

However, as described above, in an example in which the third capacitorC22 is added to the second inductor L21 in parallel, in order to formthe resonance point in the 1.4 GHz band, in such an example, it issufficient for the second inductor L21 to be formed with an inductancepattern length that has a value of approximately 3 nF, by using theadditionally connected third capacitor C22.

As a result, since the second inductor L21 is formed to have a shortinductance pattern length, corresponding to approximately ⅓ of aninductance pattern length in a case in which the third capacitor C22 isnot added, a size of the signal amplifier is decreased due to thedescribed use of the third capacitor C22.

Meanwhile, a resonance frequency is formed based on Equation 1, which isapplied to a serial configuration of the second inductor L21 and thesecond capacitor C21 and a parallel configuration of the second inductorL21 and the third capacitor C22, as described further above.

For example, the second inductor L21 and the third capacitor C22 areformed in parallel with each other, and as a result a value of C, inEquation 1 below, is increased. Thus, by configuring elements in thismanner, even when a value of L is reduced, a resonance frequency f doesnot change. Therefore, an area of a spiral inductor used in a layout isthereby decreased to decrease an entire size thereof.

$\begin{matrix}{f = \frac{1}{2\pi\sqrt{LC}}} & {{Equation}\mspace{14mu} 1}\end{matrix}$

For example, the first common source-type amplifying unit 200 includes afirst P-type metal oxide semiconductor (PMOS) transistor MP1 having asource connected to the supply terminal of the driving voltage Vdd, agate connected to an output terminal of the band suppression filter unit100 through a first coupling capacitor C11 and connected to a supplyterminal of a first gate voltage Vg1, and a drain connected to thecommon output node NCO. The first common source-type amplifying unit 200also amplifies a first input signal S11 from the band suppression filterunit 110 in order to provide the first amplified signal S21.

In this example, the first PMOS transistor MP1 is driven by receivingthe driving voltage Vdd at its source and by receiving the first gatevoltage Vg1 at its gate, and amplifies the first input signal S11 inputfrom the band suppression filter unit 100 through the first couplingcapacitor C11 in order to provide the first amplified signal S21.

In addition, in this example, the second common source-type amplifyingunit 300 includes a first N-type MOS (NMOS) transistor MN1 that has adrain connected to the common output node NCO, a gate connected to theoutput terminal of the band suppression filter unit 100 through a secondcoupling capacitor C12 and connected to a supply terminal of a secondgate voltage Vg2, and a source connected to the ground terminal GND. Thesecond common source-type amplifying unit 300 also amplifies a secondinput signal S12 from the band suppression filter unit 110 so as toprovide the second amplified signal S22.

Thus, the first PMOS transistor MN1 is driven by receiving the drivingvoltage Vdd through the first PMOS transistor MP1 at the drain thereofand receiving the second gate voltage Vg2 at the gate thereof, and byamplifying the second input signal S12 input from the band suppressionfilter unit 100 through the second coupling capacitor C12 so as toprovide the second amplified signal S22.

In addition, in an example, the output matching unit 400 is formed of asource follower amplifier that transfers the combined signal Scom to theoutput terminal OUT.

Hence, as an example, the output matching unit 400 includes a secondNMOS transistor MN2 that has a drain connected to the supply terminal ofthe driving voltage Vdd, a gate connected to the common output node NCOin order to receive the combined signal Scom, and a source connected tothe ground terminal through a source resistor R4 and connected to theoutput terminal OUT through an output capacitor C4.

Also, the second NMOS transistor MN2 included in the source followeramplifier receives the combined signal Scom generated by combining thefirst amplified signal S21 and the second amplified signal S22 with eachother in the common output node NCO, at the base thereof. The secondNMOS transistor MN2 also transfers the combined signal Scom to theoutput terminal OUT through its source.

Because the output matching unit 400 is implemented by the sourcefollower amplifier as described above, the output matching unit 400 doesnot include an additional inductor or capacitor, but does include thesecond NMOS transistor MN2 and the source resistor R4.

Because the output matching unit 400 does not include the additionalinductor, a size of the signal amplifier is accordingly decreased. Atthe same time, the output matching unit 400 matches levels of impedancebetween the common output node NCO and the output terminal OUT andserves as a buffer between the common output node NCO and the outputterminal OUT.

Referring to the example of FIGS. 2 and 4, the feedback circuit unit 500includes a feedback resistor RF that is connected between the commoninput node NCI and the common output node NCO.

The feedback resistor RF performs feedback on the combined signal of thecommon output node NCO to the common input node NCI. Thus, a bandwidthof the signal amplifier is increased while a gain of the signalamplifier is slightly decreased.

FIG. 5 is a graph illustrating S-parameter characteristics of a bandsuppression filter unit according to an example.

In the graph illustrating the S-parameter characteristics of the bandsuppression filter unit corresponding to FIG. 5, G11 is insertion loss,G12 is input return loss, and G13 is output return loss.

Referring to FIGS. 1 through 5, when the concurrent dual-bands are 800MHz and 1.9 GHz, each of the parallel resonance point produced by thefirst resonance unit 110 and the serial resonance point produced by thesecond resonance unit 120 is formed to be approximately in the 1.4 GHzband. In this case, the band of approximately 1.4 GHz in which theparallel resonance point is formed is suppressed, the band ofapproximately 1.4 GHz in which the serial resonance point is formed isbypassed to the ground, and each of the bands of 800 MHz and 1.9 GHz,which are the concurrent dual-bands, is a pass band.

Referring to G11, G12, and G13 as illustrated in FIG. 5, it isobservable that loss is not substantially present in each of the 800 MHzand 1.9 GHz bands, which are the pass bands and also the concurrentdual-bands, and loss is −40 dB or less in the 1.4 GHz band, which is asuppressed band.

FIG. 6 is a graph illustrating gain and noise factor characteristicsaccording to an example. FIG. 7 is a graphs illustrating input andoutput return loss characteristics according to an example. FIG. 8 is achart illustrating input impedance matching according to an example.FIG. 9 is a chart illustrating output impedance matching according to anexample. FIG. 10 is a graph illustrating noise impedance characteristicsaccording to an example. FIG. 11 is a graph illustrating 700 to 900MHz-input third order intercept point (IIP3) characteristics accordingto an example. In addition, FIG. 12 is a graph illustrating 1900 to 2000MHz-IIP3 characteristics according to an example.

A simulation for deriving information presented in the graphs of FIGS. 6through 12 corresponds to conditions with a driving voltage Vdd of 1.8V,and a current consumption of about 7 mA.

In FIG. 6, G21 is a graph illustrating gain characteristics and G22 is agraph illustrating noise factor (NF) characteristics, and in FIG. 7, G31is a graph illustrating input return loss and G32 is a graphillustrating output return loss.

Referring to FIGS. 6 and 7, it is observable that a gain ofapproximately 13 dB and NF of 2.0 dB in a 700 to 900 MHz band and a gainof approximately 12.5 dB and NF of 2.0 dB in an 1800 to 2000M bandsimultaneously appear as frequency characteristics and input and outputreturn coefficients are limited to −10 dB or less in both of these twobands.

FIG. 8 illustrates how well input impedance matching m1 and m2 in eachof the 800 MHz and 1900 MHz bands is achieved. Referring to the exampleof FIG. 8, in general, impedance matching is confirmed depending on howclose impedance at a corresponding frequency approaches 50Ω.

FIG. 9 illustrates how well output impedance matching m3 and m4 in eachof the bands of 800 MHz and 1.9 GHz is achieved. Referring to m3 and m4of FIG. 9, it is observable that since impedance in each of the 800 MHzand 1.9 GHz bands is close to approximately 50Ω, impedance stays withinan advantageous impedance range, such that the output impedance matchingin each of the 800 MHz and 1900 MHz bands is successful.

In addition, FIG. 10 illustrates how well noise matching for m1 and m2in each of the 800 MHz and 1900 MHz bands is made. Referring to m9 andm10 as shown in FIG. 10, it is to be appreciated that since impedance isclose to approximately 50Ω in each of the bands of 800 MHz and 1.9 GHz,the impedance is included in an advantageous impedance range, such thatthe noise matching in each of the 800 MHz and 1900 MHz bands isperformed well.

Referring to m9 and m10 as shown in FIG. 10, it is observable thatbecause impedance in each of the bands of 800 MHz and 1.9 Hz is close toapproximately 50Ω, the impedance is included in an advantageousimpedance range, such that the input impedance matching in each of the800 MHz and 1900 MHz bands is made successfully.

In addition, with reference to fundamental wave outputs Foud_output andthird order harmonics 3rd_output as shown in FIGS. 11 and 12, thesegraphs confirm that IIP3 characteristics are about −10 dBm in the 800MHz band and are about −7.5 dBm in the 1900 MHz band. The graphs alsoconfirm that stability characteristics are also satisfied in both of thetwo bands.

As set forth above, according to examples, the signal amplifier isapplied to a low power low noise amplifier (LNA) and is designed to havean inverted topology using a common source-type amplifier having a pairof a PMOS transistor and an NMOS transistor, such that an amount ofconsumed current is decreased, a gain is improved, and the number ofinductors used for input and output matching is decreased to decrease anarea of an electronic component as a result of using such an approach.

Unless indicated otherwise, a statement that a first layer is “on” asecond layer or a substrate is to be interpreted as covering both a casewhere the first layer directly contacts the second layer or thesubstrate, and a case where one or more other layers are disposedbetween the first layer and the second layer or the substrate.

Words describing relative spatial relationships, such as “below”,“beneath”, “under”, “lower”, “bottom”, “above”, “over”, “upper”, “top”,“left”, and “right”, may be used to conveniently describe spatialrelationships of one device or elements with other devices or elements.Such words are to be interpreted as encompassing a device oriented asillustrated in the drawings, and in other orientations in use oroperation. For example, an example in which a device includes a secondlayer disposed above a first layer based on the orientation of thedevice illustrated in the drawings also encompasses the device when thedevice is flipped upside down in use or operation,

Expressions such as “first conductivity type” and “second conductivitytype” as used herein may refer to opposite conductivity types such as Nand P conductivity types, and examples described herein using suchexpressions encompass complementary examples as well. For example, anexample in which a first conductivity type is N and a secondconductivity type is P encompasses an example in which the firstconductivity type is P and the second conductivity type is N.

The apparatuses, units, modules, devices, and other componentsillustrated in FIGS. 1-12 that perform the operations described hereinwith respect to FIGS. 1-12 are implemented by hardware components.Examples of hardware components include controllers, sensors,generators, drivers, memories, comparators, arithmetic logic units,adders, subtractors, multipliers, dividers, integrators, and any otherelectronic components known to one of ordinary skill in the art. In oneexample, the hardware components are implemented by computing hardware,for example, by one or more processors or computers. A processor orcomputer is implemented by one or more processing elements, such as anarray of logic gates, a controller and an arithmetic logic unit, adigital signal processor, a microcomputer, a programmable logiccontroller, a field-programmable gate array, a programmable logic array,a microprocessor, or any other device or combination of devices known toone of ordinary skill in the art that is capable of responding to andexecuting instructions in a defined manner to achieve a desired result.In one example, a processor or computer includes, or is connected to,one or more memories storing instructions or software that are executedby the processor or computer. Hardware components implemented by aprocessor or computer execute instructions or software, such as anoperating system (OS) and one or more software applications that run onthe OS, to perform the operations described herein with respect to FIGS.1-12. The hardware components also access, manipulate, process, create,and store data in response to execution of the instructions or software.For simplicity, the singular term “processor” or “computer” may be usedin the description of the examples described herein, but in otherexamples multiple processors or computers are used, or a processor orcomputer includes multiple processing elements, or multiple types ofprocessing elements, or both. In one example, a hardware componentincludes multiple processors, and in another example, a hardwarecomponent includes a processor and a controller. A hardware componenthas any one or more of different processing configurations, examples ofwhich include a single processor, independent processors, parallelprocessors, single-instruction single-data (SISD) multiprocessing,single-instruction multiple-data (SIMD) multiprocessing,multiple-instruction single-data (MISD) multiprocessing, andmultiple-instruction multiple-data (MIMD) multiprocessing.

The methods illustrated in FIGS. 1-12 that perform the operationsdescribed herein with respect to FIGS. 1-12 are performed by a processoror a computer as described above executing instructions or software toperform the operations described herein.

Instructions or software to control a processor or computer to implementthe hardware components and perform the methods as described above arewritten as computer programs, code segments, instructions or anycombination thereof, for individually or collectively instructing orconfiguring the processor or computer to operate as a machine orspecial-purpose computer to perform the operations performed by thehardware components and the methods as described above. In one example,the instructions or software include machine code that is directlyexecuted by the processor or computer, such as machine code produced bya compiler. In another example, the instructions or software includehigher-level code that is executed by the processor or computer using aninterpreter. Programmers of ordinary skill in the art can readily writethe instructions or software based on the block diagrams and the flowcharts illustrated in the drawings and the corresponding descriptions inthe specification, which disclose algorithms for performing theoperations performed by the hardware components and the methods asdescribed above.

The instructions or software to control a processor or computer toimplement the hardware components and perform the methods as describedabove, and any associated data, data files, and data structures, arerecorded, stored, or fixed in or on one or more non-transitorycomputer-readable storage media. Examples of a non-transitorycomputer-readable storage medium include read-only memory (ROM),random-access memory (RAM), flash memory, CD-ROMs, CD-Rs, CD+Rs, CD-RWs,CD+RWs, DVD-ROMs, DVD-Rs, DVD+Rs, DVD-RWs, DVD+RWs, DVD-RAMs, BD-ROMs,BD-Rs, BD-R LTHs, BD-REs, magnetic tapes, floppy disks, magneto-opticaldata storage devices, optical data storage devices, hard disks,solid-state disks, and any device known to one of ordinary skill in theart that is capable of storing the instructions or software and anyassociated data, data files, and data structures in a non-transitorymanner and providing the instructions or software and any associateddata, data files, and data structures to a processor or computer so thatthe processor or computer can execute the instructions. In one example,the instructions or software and any associated data, data files, anddata structures are distributed over network-coupled computer systems sothat the instructions and software and any associated data, data files,and data structures are stored, accessed, and executed in a distributedfashion by the processor or computer.

While this disclosure includes specific examples, it will be apparent toone of ordinary skill in the art that various changes in form anddetails may be made in these examples without departing from the spiritand scope of the claims and their equivalents. The examples describedherein are to be considered in a descriptive sense only, and not forpurposes of limitation. Descriptions of features or aspects in eachexample are to be considered as being applicable to similar features oraspects in other examples. Suitable results may be achieved if thedescribed techniques are performed in a different order, and/or ifcomponents in a described system, architecture, device, or circuit arecombined in a different manner, and/or replaced or supplemented by othercomponents or their equivalents. Therefore, the scope of the disclosureis defined not by the detailed description, but by the claims and theirequivalents, and all variations within the scope of the claims and theirequivalents are to be construed as being included in the disclosure.

What is claimed is:
 1. A signal amplifier comprising: a band suppressionfilter configured to suppress a preset band among bands included in aninput signal; a first common source-type amplifier connected between asupply terminal of a driving voltage and a ground terminal andconfigured to amplify a first input signal separated from an outputsignal of the band suppression filter in a common input node to providea first amplified signal to a common output node; a second commonsource-type amplifier stacked between the supply terminal of the drivingvoltage and the ground terminal together with the first commonsource-type amplifier and configured to amplify a second input signalseparated from the output signal of the band suppression filter in thecommon input node to provide a second amplified signal to the commonoutput node; and an output matcher configured to match levels ofimpedance between the common output node and an output terminal and totransfer a combined signal generated by combining the first amplifiedsignal and the second amplified signal with each other in the commonoutput node to the output terminal, wherein the first and second commonsource-type amplifiers form a single current path between the supplyterminal of the driving voltage and the ground terminal, and wherein theoutput matcher comprises a source follower amplifier configured totransfer the combined signal to the output terminal.
 2. The signalamplifier of claim 1, wherein the band suppression filter comprises: afirst resonator configured to suppress the preset band; and a secondresonator configured to suppress the preset band.
 3. The signalamplifier of claim 1, wherein the first resonator comprises a firstinductor and a first capacitor connected to each other in parallel, andforms a parallel resonance point in the preset band.
 4. The signalamplifier of claim 1, wherein the second resonator comprises a secondinductor and a second capacitor connected to each other in series, andfurther comprises a third capacitor connected to the second inductor inparallel, and forms a serial resonance point in the preset band.
 5. Thesignal amplifier of claim 1, wherein the first common source-typeamplifier comprises a first P-type metal oxide semiconductor (PMOS)transistor having a source connected to the supply terminal of thedriving voltage, a gate connected to an output terminal of the bandsuppression filter through a first coupling capacitor and connected to asupply terminal of a first gate voltage, and a drain connected to thecommon output node and configured to amplify a signal from the bandsuppression filter to provide the first amplified signal.
 6. The signalamplifier of claim 1, wherein the second common source-type amplifiercomprises a first N-type MOS (NMOS) transistor having a drain connectedto the common output node, a gate connected to an output terminal of theband suppression filter through a second coupling capacitor andconnected to a supply terminal of a second gate voltage, and a sourceconnected to the ground terminal and configured to amplify a signal fromthe band suppression filter to provide the second amplified signal. 7.The signal amplifier of claim 1, wherein the output matcher comprises asecond NMOS transistor having a drain connected to the supply terminalof the driving voltage, a gate connected to the common output node toreceive the combined signal, and a source connected to the groundterminal through a source resistor and connected to the output terminalthrough an output capacitor.
 8. A signal amplifier comprising: a bandsuppression filter configured to suppress a preset band among bandsincluded in an input signal; a first common source-type amplifierconnected between a supply terminal of a driving voltage and a groundterminal and configured to amplify a first input signal separated froman output signal of the band suppression filter in a common input nodeto provide a first amplified signal to a common output node; a secondcommon source-type amplifier stacked between the supply terminal of thedriving voltage and the ground terminal together with the first commonsource-type amplifier and configured to amplify a second input signalseparated from the output signal of the band suppression filter in thecommon input node to provide a second amplified signal to the commonoutput node; an output matcher configured to match levels of impedancebetween the common output node and an output terminal and configured totransfer a combined signal generated by combining the first amplifiedsignal and the second amplified signal with each other in the commonoutput node to the output terminal; and a feedback circuit connectedbetween the common input node and the common output node, configured tofeedback a signal of the common output node to the common input node,wherein the first and second common source-type amplifiers form a singlecurrent path between the supply terminal of the driving voltage and theground terminal.
 9. The signal amplifier of claim 8, wherein the bandsuppression filter comprises: a first resonator configured to suppressthe preset band; and a second resonator configured to suppress thepreset band.
 10. The signal amplifier of claim 8, wherein the firstresonator comprises a first inductor and a first capacitor connected toeach other in parallel, and forms a parallel resonance point in thepreset band.
 11. The signal amplifier of claim 8, wherein the secondresonator comprises a second inductor and a second capacitor connectedto each other in series, and further comprises a third capacitorconnected to the second inductor in parallel, and forms a serialresonance point in the preset band.
 12. The signal amplifier of claim 8,wherein the first common source-type amplifier comprises a first PMOStransistor having a source connected to the supply terminal of thedriving voltage, a gate connected to an output terminal of the bandsuppression filter through a first coupling capacitor and connected to asupply terminal of a first gate voltage, and a drain connected to thecommon output node and configured to amplify a signal from the bandsuppression filter to provide the first amplified signal.
 13. The signalamplifier of claim 8, wherein the second common source-type amplifiercomprises a first NMOS transistor having a drain connected to the commonoutput node, a gate connected to an output terminal of the bandsuppression filter through a second coupling capacitor and connected toa supply terminal of a second gate voltage, and a source connected tothe ground terminal and configured to amplify a signal from the bandsuppression filter to provide the second amplified signal.
 14. Thesignal amplifier of claim 8, wherein the output matcher comprises asource follower amplifier configured to transfer the combined signal tothe output terminal.
 15. The signal amplifier of claim 8, wherein theoutput matcher comprises a second NMOS transistor having a drainconnected to the supply terminal of the driving voltage, a gateconnected to the common output node to receive the combined signal, anda source connected to the ground terminal through a source resistor andconnected to the output terminal through an output capacitor.